发明名称 |
METHOD FOR CONTROLLING A PLASMA CHAMBER |
摘要 |
An system and method for controlling a plasma chamber includes operably coupling an RF generator to the plasma chamber, the RF generator providing an RF signal to a chamber input of the plasma chamber; measuring a parameter at the chamber input; determining a rate of change based on the measured parameter; detecting an excessive rate of change condition comprising the rate of change exceeding a reference rate of change; detecting a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; upon detection of the repetitive change condition, decreasing a power of the RF signal provided to the chamber input. |
申请公布号 |
US2015318223(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514702900 |
申请日期 |
2015.05.04 |
申请人 |
Reno Technologies, Inc. |
发明人 |
BHUTTA Imran Ahmed |
分类号 |
H01L21/66;C23C16/52;H01J37/32;C23C16/505 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A system for controlling a plasma chamber, the system comprising:
an RF generator operably coupled to a chamber input of the plasma chamber, the RF generator configured to provide an RF signal to the chamber input; a sensor component configured to measure a parameter at the chamber input; and a control unit configured to:
receive a sensor signal from the sensor component, the sensor signal indicative of the measured parameter;determine a rate of change based on the measured parameter;detect an excessive rate of change condition comprising the rate of change exceeding a reference rate of change;detect a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; andupon detection of the repetitive change condition, decrease a power of the RF signal provided to the chamber input. |
地址 |
Wilmington DE US |