发明名称 METHOD FOR CONTROLLING A PLASMA CHAMBER
摘要 An system and method for controlling a plasma chamber includes operably coupling an RF generator to the plasma chamber, the RF generator providing an RF signal to a chamber input of the plasma chamber; measuring a parameter at the chamber input; determining a rate of change based on the measured parameter; detecting an excessive rate of change condition comprising the rate of change exceeding a reference rate of change; detecting a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; upon detection of the repetitive change condition, decreasing a power of the RF signal provided to the chamber input.
申请公布号 US2015318223(A1) 申请公布日期 2015.11.05
申请号 US201514702900 申请日期 2015.05.04
申请人 Reno Technologies, Inc. 发明人 BHUTTA Imran Ahmed
分类号 H01L21/66;C23C16/52;H01J37/32;C23C16/505 主分类号 H01L21/66
代理机构 代理人
主权项 1. A system for controlling a plasma chamber, the system comprising: an RF generator operably coupled to a chamber input of the plasma chamber, the RF generator configured to provide an RF signal to the chamber input; a sensor component configured to measure a parameter at the chamber input; and a control unit configured to: receive a sensor signal from the sensor component, the sensor signal indicative of the measured parameter;determine a rate of change based on the measured parameter;detect an excessive rate of change condition comprising the rate of change exceeding a reference rate of change;detect a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; andupon detection of the repetitive change condition, decrease a power of the RF signal provided to the chamber input.
地址 Wilmington DE US