发明名称 |
De-Embedding On-Wafer Devices |
摘要 |
An apparatus includes three components. The first component includes a first transmission line; the second component is coupled with the first component and includes a second transmission line; and the third component electrically coupled with the first component and/or the second component. The transmission lines each include a substrate with a p-well or n-well within the substrate and a shielding layer over the p-well or n-well. The transmission lines also each include a plurality of intermediate conducting layers over the shielding layer, the plurality of intermediate conducting layers coupled by a plurality of vias. The transmission lines further each include a top conducting layer over the plurality of intermediate conducting layers. |
申请公布号 |
US2015316603(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514798722 |
申请日期 |
2015.07.14 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yen Hsiao-Tsung;Kuo Chin-Wei;Chen Ho-Hsiang;Liu Sa-Lly;Lin Yu-Ling |
分类号 |
G01R31/26;G01R1/04 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
a first component including a first transmission line; a second component coupled with the first component, wherein the second component includes a second transmission line; and a third component electrically coupled with the first component and/or the second component, wherein the first transmission line and the second transmission line are each comprised of:
a substrate;a p-well or n-well within the substrate;a shielding layer over the p-well or n-well;a plurality of intermediate conducting layers over the shielding layer, the plurality of intermediate conducting layers coupled by a plurality of vias; anda top conducting layer over the plurality of intermediate conducting layers. |
地址 |
Hsin-Chu TW |