发明名称 De-Embedding On-Wafer Devices
摘要 An apparatus includes three components. The first component includes a first transmission line; the second component is coupled with the first component and includes a second transmission line; and the third component electrically coupled with the first component and/or the second component. The transmission lines each include a substrate with a p-well or n-well within the substrate and a shielding layer over the p-well or n-well. The transmission lines also each include a plurality of intermediate conducting layers over the shielding layer, the plurality of intermediate conducting layers coupled by a plurality of vias. The transmission lines further each include a top conducting layer over the plurality of intermediate conducting layers.
申请公布号 US2015316603(A1) 申请公布日期 2015.11.05
申请号 US201514798722 申请日期 2015.07.14
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yen Hsiao-Tsung;Kuo Chin-Wei;Chen Ho-Hsiang;Liu Sa-Lly;Lin Yu-Ling
分类号 G01R31/26;G01R1/04 主分类号 G01R31/26
代理机构 代理人
主权项 1. An apparatus comprising: a first component including a first transmission line; a second component coupled with the first component, wherein the second component includes a second transmission line; and a third component electrically coupled with the first component and/or the second component, wherein the first transmission line and the second transmission line are each comprised of: a substrate;a p-well or n-well within the substrate;a shielding layer over the p-well or n-well;a plurality of intermediate conducting layers over the shielding layer, the plurality of intermediate conducting layers coupled by a plurality of vias; anda top conducting layer over the plurality of intermediate conducting layers.
地址 Hsin-Chu TW
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