| 摘要 |
The present invention relates to a thin film deposition device, and the thin film deposition device according to the present invention comprises: a gas supply unit for supplying a plurality of process gases, including a raw material gas and a reaction gas, and a purge gas, the gas supply unit having at least one gas supply module for discharging the remaining process gases or the purge gas; and a substrate support unit for supporting a substrate, the substrate support unit being configured to be able to move with regard to the gas supply unit, the thin film deposition device being characterized in that the substrate support unit performs at least one loop movement including a plurality of times of stepwise forward movements and stepwise backward movements, and the loop movement distance between the initial position of the substrate and the final position thereof, when performing the one loop movement, is equal to or larger than the distance of the one gas supply module. |
