发明名称 |
GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING |
摘要 |
<p>A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.</p> |
申请公布号 |
EP2939259(A1) |
申请公布日期 |
2015.11.04 |
申请号 |
EP20130849973 |
申请日期 |
2013.12.31 |
申请人 |
SAINT-GOBAIN CRISTAUX & DÉTECTEURS |
发明人 |
FAURIE, JEAN-PIERRE;BEAUMONT, BERNARD |
分类号 |
H01L21/20;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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