发明名称 半導体材料並びにそれを用いた光触媒体、光電極及び太陽電池
摘要 PROBLEM TO BE SOLVED: To provide a material having optical responsivity, especially visible light responsivity, using an inexpensive material.SOLUTION: This semiconductor material showing p-type semiconductor characteristics is provided by doping nitrogen and a metal element other than iron in an iron oxide crystal containing hematite crystalline phase. The ratio of the number of nitrogen atoms to the number of iron atoms (in terms of N/Fe) is more than 0 and not higher than 0.05, and the ratio of the number of metal atoms to the number of iron atoms (in terms of metal atom/Fe) is more than 0 and not higher than 0.05. This semiconductor material can be used as a material constituting a photoelectrode, a photocatalyst and a solar cell.
申请公布号 JP5803288(B2) 申请公布日期 2015.11.04
申请号 JP20110122317 申请日期 2011.05.31
申请人 株式会社豊田中央研究所 发明人 森川 健志;荒井 健男;梶野 勉
分类号 C23C14/08;B01J27/24;B01J35/02;C01G49/06;H01L31/06 主分类号 C23C14/08
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