| 摘要 |
<p>Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.</p> |
