| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon photodiode array having a sufficient spectral sensitivity characteristic in a wavelength band of a near infrared. <P>SOLUTION: A photodiode array PDA1 comprises: a substrate S which includes an n type semiconductor layer 32 and on which a plurality of light detection channels CH are formed; a p<SP POS="POST">-</SP>type semiconductor layer 33 formed on the n type semiconductor layer 32; resistors 24 provided for respective light detection channels CH with one ends being connected to signal conductor wires 23; and n type separation parts 40 formed among the plurality of light detection channels CH. The p<SP POS="POST">-</SP>type semiconductor layer 33 forms p-n junction at a boundary surface with the n type semiconductor layer 32 and includes a plurality of multiplication regions AM amplifying a carrier generated by incidence of detected light by avalanche multiplication corresponding to the light detection channels. On a surface of the n type semiconductor layer 32, irregular convexoconcave 10 is formed and the surface is optically exposed. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
