Semiconductor layer structure with overlay grid

摘要

The structure has stacked layers (9a, 9b) of two types provided as III-V compound semiconductor. The layers of the types are provided in a unit, are adjacent to a superlattice and are provided with different layer thicknesses. The layer thicknesses of the layers of the types are increased with increased distance of active layers (6) by layer to layer. A vertical position is assigned within the structure at individual layers of the superlattice.