发明名称 |
Method of producing a thin-film semiconductor chip |
摘要 |
<p>Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.</p> |
申请公布号 |
EP1794816(B1) |
申请公布日期 |
2015.11.04 |
申请号 |
EP20050791446 |
申请日期 |
2005.09.23 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
PLÖSSL, ANDREAS;STEIN, WILHELM |
分类号 |
H01L33/00;H01L33/38;H01L33/40 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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