| 摘要 |
<p>There is provided a gas barrier film which has high barrier performance and is excellent in bending resistance and smoothness as well as cutting processing suitability; a method for producing the gas barrier film; and an electronic device in which the gas barrier film is used. A gas barrier film, comprising a gas barrier layer unit on at least one surface side of a base, wherein the gas barrier layer unit comprises a first barrier layer formed by a chemical vapor deposition method, a second barrier layer obtained by performing conversion treatment to a coating film formed by coating a silicon compound onto the first barrier layer and an intermediate layer between the first barrier layer and the base.</p> |
