发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
申请公布号 EP2738794(A4) 申请公布日期 2015.11.04
申请号 EP20120818068 申请日期 2012.07.27
申请人 NISSAN MOTOR CO., LTD.;SUMITOMO METAL MINING CO., LTD.;FUJI ELECTRIC CO., LTD. 发明人 TANIMOTO, SATOSHI;ZUSHI, YUSUKE;MURAKAMI, YOSHINORI;ISEKI, TAKASHI;TAKAMORI, MASATO;MATSUI, KOHEI
分类号 H01L21/52;B23K1/008;B23K1/19;B23K1/20;B23K35/28;C22C18/04 主分类号 H01L21/52
代理机构 代理人
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