| 摘要 |
According to one embodiment, there is provided a manufacturing method of an electronic device (100) including a lower electrode (9), a source electrode (3) and a drain electrode (4) made of a nanoparticulate conductive material on a substrate (1), an organic semiconductor layer (5) between the source (3) and drain (4) electrodes, and a gate electrode (8) on the organic semiconductor layer (5) via a gate insulating layer (6,7). The manufacturing method includes forming a nonphotosensitive resin layer (6) as the gate insulating layer on the organic semiconductor layer (5) and on the lower electrode (9), forming a photosensitive resin layer (7) as the gate insulating layer on the nonphotosensitive resin layer (6), and forming a through hole (10A) in the photosensitive resin layer (7) on the lower electrode (9). |
