METHOD OF GROWING NITRIDE SEMICONDUCTOR AND LIGHT EMITTING DEVICE FABRICATED BY USING THE SAME

摘要

Disclosed are a method for growing a nitride semiconductor and a light emitting device manufactured thereby. The light emitting device according to the present invention includes an n-type nitride semiconductor layer which includes an intermediate layer, an active layer which is located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer which is located on the active layer. The intermediate layer includes a super lattice layer which is formed by repetitively stacking a first nitride layer and a second nitride layer with bandgap energy which is smaller than the bandgap energy of the first nitride layer. The first nitride layer is doped with an n-type of doping density over 5 x 1019atoms/cm^3.