| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a defect analysis method for silicon single crystal which allows easy analysis of a distribution of crystal defects in a silicon single crystal even in pulling a silicon single crystal by the MCZ method including application of a magnetic field in the horizontal direction.SOLUTION: In an in-crucible convection flow calculation step S2, a convection flow of a silicon molten liquid is calculated by using a laminar flow model and physical properties of prepared silicon molten liquid. In the calculation, the convection flow of the silicon molten liquid in a plane of two-dimensional axial symmetry with respect to the rotation axis of the silicon single crystal is calculated. The method far reduces the number of meshes, compared with a conventional calculation by a three-dimensional convection flow model. Even for a silicon single crystal having a diameter of 310 mm or so, a convection of silicon molten liquid can be calculated in one day or so.</p> |
