SIC SCHOTTKY BARRIER DIODE USING TILT ION IMPLANTATION AND METHOD FOR MANUFACTURING THEREOF

摘要

The present invention relates to a silicon carbide Schottky barrier diode using a tilt ion implantation and a manufacturing method thereof. The method for manufacturing the silicon carbide Schottky barrier diode includes the steps of: forming a trench structure by etching an N-type epi-layer after the N-type epi-layer is grown on an N-type SiC substrate; forming an N+ doping layer on the wall of one side of the trench structure; insulating the remaining part of the trench structure with a nonconductor; and depositing a field plate using a metal thin film on the upper region of the nonconductor exposed through the trench structure and the N-type epi-layer.