| 摘要 |
<p>A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane, and a film formation step of growing a silicon carbide layer on a surface of the base substrate. In the film formation step, a region having a (0001) facet 5 is formed on a surface of the grown silicon carbide layer at an end portion on an upstream side, the upstream side being a side where an angle of intersection between a <0001> direction axis of the base substrate and the surface of the base substrate in the off angle direction is an acute angle.</p> |
