| 发明名称 |
VARIED MULTILAYER MEMRISTIVE DEVICE |
| 摘要 |
<p>A varied multilayer memristive device includes a first memristive device stacked on a second memristive device. The physical parameters of the second memristive device differ from physical parameters of the first memristive to account for thermal budgeting differences present during formation processes for the memristive devices to reach specified performance parameters.</p> |
| 申请公布号 |
EP2826067(A4) |
申请公布日期 |
2015.11.04 |
| 申请号 |
EP20120871063 |
申请日期 |
2012.03.16 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
CHO, HANS S. |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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