STRUCTURE AND METHOD FOR SRAM FINFET DEVICE

摘要

The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having an n-type FinFET (NFET) region and a p-type FinFET (PFET) region. The device also includes first and second fin structures over the substrate in the NFET region and a third fin structure over the substrate in the PFET region. The device also includes a first high-k (HK)/metal gate (MG) stack in the NFET region, including wrapping over a portion of the first fin structure; a first subset of the first source/drain (S/D) features, adjacent to the first HK/MG stack and over the recessed first fin structure; and a second subset of the first S/D features partially over the recessed second fin structure and partially over the recessed first fin structure.