发明名称 ナノギャップ電極及びその製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nano gap electrode which significantly reduces applied current and process time during electromigration without conducting a process where a conductive film is formed and then energized to form a nano gap. <P>SOLUTION: Metal electrodes 80, 81 are formed on an insulation substrate 70. A conductive material is deposited on the insulation substrate while applying a voltage or a current, which induces electromigration, between the metal electrodes, to form a conductive fine line having a nano scale gap. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5804415(B2) 申请公布日期 2015.11.04
申请号 JP20110183237 申请日期 2011.08.25
申请人 发明人
分类号 H01L21/28;B82Y40/00;B82Y99/00 主分类号 H01L21/28
代理机构 代理人
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