发明名称 Method for producing printed-wiring board
摘要 The present invention provides a method for producing a printed-wiring board in a semi-additive process, comprising the steps of: providing a chemical copper plating 4 on an insulation layer 3 or forming a copper thin film on the insulation layer 3 using a sputtering method; subjecting the obtained copper surface 4 to a roughening treatment using an etching solution containing 0.1 to 3% by mass of hydrogen peroxide, 0.3 to 5% by mass of sulfuric acid, 0.1 to 3 ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles; attaching a dry film resist 5 to the copper surface 4 after the roughening treatment to perform exposure and development and providing an electrolytic copper plating 7 to an opening 6 after the exposure; and subjecting the remaining dry film resist to a stripping treatment using a resist stripping liquid containing 0.5 to 20% by mass of monoethanolamine, 0.2 to 10% by mass of quaternary ammonium hydroxide, 0.01 to 10% by mass of ethylene glycols and 0.01 to 0.5% by mass of azoles.
申请公布号 US9179551(B2) 申请公布日期 2015.11.03
申请号 US201414332798 申请日期 2014.07.16
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 Takahashi Kenichi;Ikeda Kazuhiko
分类号 H05K3/06;H01B13/00;H05K3/10;C23F1/18;C25D5/02;C23C18/16;C23C18/38;H05K3/18 主分类号 H05K3/06
代理机构 Greenblum & Bernstein, P.L.C. 代理人 Greenblum & Bernstein, P.L.C.
主权项 1. A method for producing a printed-wiring board in a semi-additive process, comprising: providing a chemical copper plating on an insulation layer or forming a copper thin film as a seed layer on the insulation layer using a sputtering method; subjecting a surface of the chemical copper plating or a surface of the copper thin film to a roughening treatment using an etching solution containing 0.1 to 3% by mass of hydrogen peroxide, 0.3 to 5% by mass of sulfuric acid, 0.1 to 3 ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles; attaching a dry film resist to the surface of the chemical copper plating or the surface of the copper thin film after the roughening treatment to perform exposure and development and providing an electrolytic copper plating to an opening after the exposure; and subjecting the remaining dry film resist to a stripping treatment using a resist stripping liquid containing 0.5 to 20% by mass of monoethanolamine, 0.2 to 10% by mass of quaternary ammonium hydroxide, 0.01 to 10% by mass of ethylene glycols and 0.01 to 0.5% by mass of azoles, wherein a copper surface roughness (Ra) before and after the roughening treatment is 0.1 to 0.3 μm with the proviso that the value of the copper surface roughness is measured by using a scanning tunneling microscope (30,000×).
地址 Tokyo JP