发明名称 Lithography methods, methods for forming patterning tools and patterning tools
摘要 Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.
申请公布号 US9176385(B2) 申请公布日期 2015.11.03
申请号 US201314107767 申请日期 2013.12.16
申请人 Micron Technology, Inc. 发明人 Zhou Jianming;Light Scott L.;Kewley David;Srinivasan Prasanna;deVilliers Anton
分类号 G03F1/44;G03F7/20;G03F1/26;G03F1/32 主分类号 G03F1/44
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method, comprising: transmitting energy through a first region of a patterning tool, forming a first diffraction image on a lens while forming a pattern of features on a working surface; transmitting energy through a second region of the patterning tool, forming a second diffraction image on the lens, wherein the second region of the patterning tool includes a pattern of features that are formed in a substantially transparent material of the patterning tool; wherein lens distortion from local heating of the lens due to the first diffraction image is at least partially compensated by local heating of the lens due to the second diffraction image.
地址 Boise ID US