| 摘要 |
A memory system according to the technical idea of the present invention includes a memory device which includes memory cells, and a memory controller which controls the memory device. The memory controller includes a storage part which sequentially stores commands received from a host, a determination part which determines a gap between a readout command and a program command regarding the same word line among the stored commands, and a readout voltage level determination part which makes a decision on a reading voltage level corresponding to the readout command based on the determined gap. |
