Method of forming a memory device

摘要

A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

主权项

1. A method of forming a memory element, comprising the acts of:
forming circuitry in a memory array; forming a plurality of insulating portions over the circuitry; forming an electrical connection through said plurality of insulating portions to said circuitry, wherein at least one of the electrical connections comprises a via filled with tungsten; etching at least one of said insulating portions to form an etched region; forming a bond pad in the etched region; plating the bond pad to form a cap over the bond pad; forming memory material over the plurality of insulating portions; and forming an electrode over the memory material.