Substituted silacyclopropane precursors and their use for the deposition of silicon-containing films

摘要

Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

主权项

1. A method of depositing a silicon-containing film, the method comprising:
a. exposing a substrate surface to a silicon precursor having a structure represented by:  wherein each R, R1 and R2 are independently a negatively charged group or a saturated or unsaturated, linear or branched or cyclic group with 1-8 atoms selected from carbon and nitrogen, R3-6 are each independently a saturated or unsaturated, linear or branched or cyclic group with 1-8 atoms selected from carbon and nitrogen and n ranges from 0 to 6; and b. exposing the substrate surface to a co-reactant to provide a silicon-containing film.