发明名称 MEMORY CONTROL UNIT AND DATA STORAGE DEVICE INCLUDING THE SAME
摘要 The present invention relates to a data storage device. More particularly, the present invention relates to a memory control unit capable of improving an operating speed, and a data storage device including the same. The data storage device includes a nonvolatile memory device; and a memory control unit which includes a signal generation block which generates control signals to be supplied to the nonvolatile memory device, and an error correction code block which performs error code encoding on data to be stored in the nonvolatile memory device. The error correction code block is operated before the signal generation block.
申请公布号 KR20150122825(A) 申请公布日期 2015.11.03
申请号 KR20140048501 申请日期 2014.04.23
申请人 SK HYNIX INC. 发明人 KIM, JAE WOO;AN, JOONG HYUN;KIM, KWANG HYUN
分类号 G11C29/42 主分类号 G11C29/42
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