发明名称 Tiled showerhead for a semiconductor chemical vapor deposition reactor
摘要 A showerhead for a semiconductor-processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.
申请公布号 US9175393(B1) 申请公布日期 2015.11.03
申请号 US201113222890 申请日期 2011.08.31
申请人 Alta Devices, Inc. 发明人 Higashi Gregg;Sorabji Khurshed;Washington Lori D.;Hegedus Andreas
分类号 C23C16/50;H01L21/306;C23F1/00;C23C16/455;C23C16/458 主分类号 C23C16/50
代理机构 代理人 Schneck Thomas;McCarthy Gina
主权项 1. A showerhead for a semiconductor-processing reactor, comprising: an array of showerhead tiles, with each showerhead tile having a plurality of process gas apertures in a central area of the showerhead tile and a border, the border of each tile in contact with and connected to a border of at least one other tile, each showerhead tile of the array being dimensioned for processing a substrate; and an exhaust region surrounding the process gas apertures and including a surface extending from one or more central areas of one or more of the showerhead tiles, the exhaust region having at least one exhaust aperture in the surface.
地址 Sunnyvale CA US