P-type doping layers for use with light emitting devices

摘要

A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

主权项

1. A light emitting device comprising:
an n-type gallium nitride layer; an active layer adjacent to the n-type gallium nitride layer, the active layer comprising indium (In); an electron blocking layer adjacent to the active layer; and a p-type gallium nitride layer adjacent to the electron blocking layer, wherein the light emitting device comprises indium (In) at an interface between the electron blocking layer and the p-type gallium nitride layer, an In intensity having a first peak in the interface and a second peak in the active layer, the first peak of the In intensity in the interface being lower than the second peak of In intensity in the active layer, and wherein the p-type gallium nitride layer extends into one or more V-pits of the active layer.