发明名称 |
Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacer |
摘要 |
A raised source/drain MOS transistor is formed in a process that utilizes a first sidewall spacer when implanting a semiconductor region to form the heavily-doped source region and the heavily-doped drain region of the transistor, and a second different sidewall spacer when epitaxially growing the raised source region and the raised drain region of the transistor. |
申请公布号 |
US9178038(B2) |
申请公布日期 |
2015.11.03 |
申请号 |
US201514609051 |
申请日期 |
2015.01.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Song Seung-Chul;Blatchford James W.;Lim Kwan-Yong |
分类号 |
H01L21/336;H01L29/78;H01L29/66;H01L21/265;H01L29/08;H01L29/417 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
Garner Jacqueline J.;Cimino Frank D. |
主权项 |
1. A method of forming a semiconductor structure comprising:
forming a gate structure that includes a gate dielectric that touches and lies above a semiconductor region, and a gate that touches and lies above the gate dielectric; implanting the semiconductor region after the gate structure has been formed to form a lightly-doped source region and a lightly-doped drain region that touch the semiconductor region; forming a first sidewall spacer that touches and laterally surrounds the gate structure; implanting the semiconductor region, the lightly-doped source region, and the lightly-doped drain region after the first sidewall spacer has been formed to form a heavily-doped source region and a heavily-doped drain region, the heavily-doped source region touching the semiconductor region and the lightly-doped source region, the heavily-doped drain region touching the semiconductor region and the lightly-doped drain region; forming a second sidewall spacer that touches and laterally surrounds the gate structure after the heavily-doped source region and the heavily-doped drain region have been formed; epitaxially growing a raised source region that touches the heavily-doped source region, and a raised drain region that touches the heavily-doped drain region after the second sidewall spacer has been formed; and removing the first sidewall spacer after the heavily-doped source region and the heavily-doped drain region have been formed and before the second sidewall spacer is formed. |
地址 |
Dallas TX US |