Methods for forming resistive switching memory elements

摘要

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

主权项

1. A resistive switching memory element comprising:
a first conductive layer; and a metal oxide layer disposed on the first conductive layer; wherein the metal oxide layer is configured to switch between a low resistance state and a high resistance state during operation of the resistive switching memory element; wherein the metal oxide layer comprises a first metal; wherein the first conductive layer comprises a second metal; wherein at least one of the first metal or the second metal comprises an additive; and wherein the additive causes an oxidation rate of the first metal to be lower than an oxidation rate of the second metal during formation of the metal oxide layer.