| 发明名称 | Magnetoresistive element using specific underlayer material | ||
| 摘要 | According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided. | ||
| 申请公布号 | US9178133(B2) | 申请公布日期 | 2015.11.03 |
| 申请号 | US201414160419 | 申请日期 | 2014.01.21 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kitagawa Eiji;Kai Tadashi;Yoda Hiroaki |
| 分类号 | H01L43/10;H01F10/08;G11C11/16;H01L43/08;H01F10/30;H01F10/32;G01R33/09 | 主分类号 | H01L43/10 |
| 代理机构 | Knobbe, Martens, Olson & Bear, LLP | 代理人 | Knobbe, Martens, Olson & Bear, LLP |
| 主权项 | 1. A magnetoresistive element comprising: a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction; a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction; an intermediate layer provided between the recording layer and the reference layer; and an underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided, wherein the underlayer comprises an amorphous structure, and contains one element selected from the group consisting of O, B and C. | ||
| 地址 | Tokyo JP | ||