发明名称 Pattern inspection method and pattern inspection apparatus
摘要 In accordance with an embodiment, a pattern inspection method includes applying a light to a substrate including an inspection target pattern in a plurality of optical conditions, detecting a reflected light from the substrate to acquire a pattern image for each of the optical conditions, outputting a gray value difference between the pattern image and a reference image for each of the optical conditions, and specifying a position of the defect in a stacking direction of the stacked film from a relation of the obtained gray value difference between the optical conditions. The pattern is formed by a stacked film, the optical conditions includes at least a first optical condition for detection of a defect on a surface of the stacked film.
申请公布号 US9176074(B2) 申请公布日期 2015.11.03
申请号 US201314018739 申请日期 2013.09.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Fujii Takayoshi;Yoshino Kiminori;Kaneko Makoto;Konno Yusaku;Iida Yusuke
分类号 G06K9/00;G01N21/956;G06T7/00;G01R31/311 主分类号 G06K9/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A pattern inspection method comprising: applying a light to a substrate under a plurality of optical conditions which are different from each other, the substrate comprising an inspection target pattern in which a stacked film is formed; detecting a reflected light from the substrate to acquire a pattern image for each of the different optical conditions; outputting a gray value difference between the pattern image and a reference image for each of the different optical conditions; and specifying a position of the defect in a stacking direction of the stacked film from a relation of the obtained gray value difference between the different optical conditions, wherein the optical conditions comprise at least one of a wavelength, a focus position, and a polarized light.
地址 Minato-ku JP