Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit

摘要

Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.

主权项

1. A method of reducing a registration error of a photomask, the method comprising:
measuring the registration error with respect to a pattern element in a main pattern region configured to transfer main patterns for an integrated circuit on a chip region of a wafer, wherein the photomask comprises the main pattern region, an auxiliary pattern region configured to transfer auxiliary patterns on a scribe line region of the wafer, and a black border region around the main pattern region and the auxiliary pattern region, and wherein the photomask comprises a photomask substrate and a multi-layer pattern on the photomask substrate; identifying a first direction, to which the pattern element is shifted from a nominal position, using a result of measuring the registration error; and changing a strain of the photomask at a location of the pattern element by physically deforming a portion of the multi-layer pattern of the photomask at a selection point that is spaced apart from the location of the pattern element in a second direction that is different from the first direction and is in at least one of the auxiliary pattern region and the black border region.