PROCESS FOR PRODUCING MAGNETORESISTIVE ELEMENT

摘要

The present invention provides a method for manufacturing a magnetoresistive element with a high selection ratio of an insulating layer to a free layer. The method for manufacturing the magnetoresistive element includes the steps of preparing (left drawing and middle drawing) a substrate (201) on which the free layer (206), a fixed layer (204) arranged on the lower side of a first magnetic layer, and a barrier layer which is an insulating layer and is arranged between the free layer (206) and the fixed layer (204) are formed; and processing (right drawing) the free layer (206) by plasma etching. The insulating layer (702) comprising the barrier layer contains a Ta element or a Ti element.