N-POLAR ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR

摘要

A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.