Light emitting device and light emitting device package

摘要

The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

主权项

1. A light emitting device comprising:
a first conduction type semiconductor layer; an active layer formed on the first conduction type semiconductor layer; and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a plurality of quantum well layers and a plurality of quantum barrier layers, a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than each of face direction lattice constants of the quantum barrier layers, and the face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is smaller than each of the face direction lattice constants of the quantum well layers, and wherein each of the face direction lattice constants of the quantum well layers becomes greater gradually in a thickness direction from an edge to a middle of the respective quantum well layer.