发明名称 |
Imaging device |
摘要 |
A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer. |
申请公布号 |
US9177989(B2) |
申请公布日期 |
2015.11.03 |
申请号 |
US201313799752 |
申请日期 |
2013.03.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Fujiwara Ikuo;Funaki Hideyuki;Todori Kenji;Fujimoto Akira;Nakanishi Tsutomu;Nakamura Kenji |
分类号 |
H01L27/148;H01L21/00;H01L27/146 |
主分类号 |
H01L27/148 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. An imaging device, comprising:
a photo detector provided in a semiconductor substrate; a first photoelectric conversion layer provided above the photo detector; a plurality of first metal dots provided above the first photoelectric conversion layer; a second photoelectric conversion layer provided above the first metal dots; and a plurality of second metal dots provided above the second photoelectric conversion layer, wherein each of the first and second metal dots includes an upper metal member and a lower metal member each having a different width, and a width of the upper metal member of one of the first and second metal dots, which is more distant from a face from which light is incident, is the same as a width of the lower metal member of the other, which is closer to the face from which light is incident. |
地址 |
Tokyo JP |