发明名称 Imaging device
摘要 A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.
申请公布号 US9177989(B2) 申请公布日期 2015.11.03
申请号 US201313799752 申请日期 2013.03.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Fujiwara Ikuo;Funaki Hideyuki;Todori Kenji;Fujimoto Akira;Nakanishi Tsutomu;Nakamura Kenji
分类号 H01L27/148;H01L21/00;H01L27/146 主分类号 H01L27/148
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. An imaging device, comprising: a photo detector provided in a semiconductor substrate; a first photoelectric conversion layer provided above the photo detector; a plurality of first metal dots provided above the first photoelectric conversion layer; a second photoelectric conversion layer provided above the first metal dots; and a plurality of second metal dots provided above the second photoelectric conversion layer, wherein each of the first and second metal dots includes an upper metal member and a lower metal member each having a different width, and a width of the upper metal member of one of the first and second metal dots, which is more distant from a face from which light is incident, is the same as a width of the lower metal member of the other, which is closer to the face from which light is incident.
地址 Tokyo JP