Semiconductor device

摘要

A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

主权项

1. A semiconductor device comprising:
a transistor comprising a semiconductor film over a substrate; a pixel portion over the substrate; a first light-transmitting conductive film over the substrate in the pixel portion; a first insulating film over the semiconductor film and the first light-transmitting conductive film, the first insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion; a second insulating film over the first insulating film and the first light-transmitting conductive film; a second light-transmitting conductive film over the second insulating film in the pixel portion; and an alignment film over the second light-transmitting conductive film, the alignment film comprising a first alignment region, wherein the first alignment region and the opening overlap each other, wherein in the first alignment region, an angle between a surface of the substrate and a surface of the first alignment region is less than or equal to 45°, and wherein the semiconductor film is light-transmitting.