发明名称 Semiconductor test device and method for fabricating the same
摘要 Semiconductor test devices and methods for fabricating the same may be provided. The semiconductor test device may include a first thermal test flip chip cell including a first heater and a first sensor, and a test substrate formed under the first thermal test flip chip cell. The first thermal test flip chip cell may include a plurality of first bumps arranged on a bottom surface of the first thermal test flip chip cell and be configured to be electrically connected to the first heater and the first sensor. The test substrate may include a first ball array arranged on a bottom surface of the test substrate in a first direction and be configured to be electrically connected to the plurality of first bumps, which are electrically connected to the first heater and the first sensor.
申请公布号 US9177887(B2) 申请公布日期 2015.11.03
申请号 US201314068091 申请日期 2013.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Choi Mi-Na;Kim Ji-Chul;Bae Se-Ran;Cho Eun-Seok;Hwang Hee-Jung
分类号 H01L23/48;H01L23/34;G01R31/28;H01L21/66;H01L23/00 主分类号 H01L23/48
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A semiconductor test device comprising: a first thermal test flip chip cell including a first heater and a first sensor, the first thermal test flip chip cell including a plurality of first bumps arranged on a bottom surface thereof, the plurality of first bumps configured to electrically connect to the first heater and the first sensor; and a test substrate under the first thermal test flip chip cell, the test substrate including a first ball array arranged on a bottom surface thereof in a first direction, the first ball array configured to electrically connect to the plurality of first bumps.
地址 Gyeonggi-Do KR