| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second conductivity type opposite to the first conductivity type; a main electrode connected to the source region and the body region; and a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied, and the semiconductor device includes: a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess. | ||
| 申请公布号 | US9178055(B2) | 申请公布日期 | 2015.11.03 |
| 申请号 | US201414496808 | 申请日期 | 2014.09.25 |
| 申请人 | Sanken Electric Co., LTD. | 发明人 | Tanaka Yuki;Yoshie Toru;Kandori Mikio;Ozawa Yusuke |
| 分类号 | H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L29/78;H01L29/417;H01L29/45 | 主分类号 | H01L27/108 |
| 代理机构 | Banner & Witcoff, Ltd. | 代理人 | Banner & Witcoff, Ltd. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate, a surface of the semiconductor substrate provided with: a source region having a first conductivity type formed in a body region, the body region having a second conductivity type opposite to the first conductivity type;a main electrode connected to the source region and the body region; anda gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied; and a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess, and wherein the body region and the source region are sequentially formed on the inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess. | ||
| 地址 | Niiza-shi, Saitama JP | ||