Low-resistance electrode design

摘要

A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.

主权项

1. A semiconductor device comprising:
a first electrode and a second electrode to a semiconductor structure of the device, wherein each electrode includes a current feeding contact and a plurality of fingers extending therefrom, and wherein the plurality of fingers of the first and second electrodes are adjacent to each other in an alternating pattern, and wherein a depth, dFING, for each end finger satisfies dFING≧3*LTR, and a depth for each and every interior finger satisfies dFING≧6*LTR, where LTR is a characteristic contact transfer length for a junction between the fingers and the semiconductor device.