Light emitting device having interstitial elements in grain boundaries of barrier layer

摘要

A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and an electrode on at least one of the first conductive semiconductor layers or the second semiconductor layer. The electrode includes an adhesive layer on the light emitting structure, a barrier layer on the adhesive layer, and a bonding layer on the barrier layer. The barrier layer includes a plurality of grain boundaries, and the grain boundaries include interstitial elements.

主权项

1. A light emitting device comprising:
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer therebetween, and an electrode on at least one of the first conductive semiconductor layer or the second conductive semiconductor layer, wherein the electrode comprises:
an adhesive layer on the light emitting structure;a barrier layer on the adhesive layer; anda bonding layer on the barrier layer, andwherein the barrier layer includes a plurality of grain boundaries, wherein interstitial elements are distributed in the barrier layer and the grain boundaries, wherein the grain boundaries include interstitial elements and eutectic materials between the interstitial elements.