发明名称 Solid-state image pickup apparatus and image pickup system
摘要 An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
申请公布号 US9178081(B2) 申请公布日期 2015.11.03
申请号 US201313898264 申请日期 2013.05.20
申请人 CANON KABUSHIKI KAISHA 发明人 Endo Nobuyuki;Itano Tetsuya;Yamazaki Kazuo;Watanabe Kyouhei;Ichikawa Takeshi
分类号 H01L27/146;H01L31/0224;H01L31/02;H04N5/374 主分类号 H01L27/146
代理机构 Canon USA, Inc. IP Division 代理人 Canon USA, Inc. IP Division
主权项 1. A solid-state image pickup apparatus in which a first semiconductor substrate comprising silicon and a second semiconductor substrate comprising silicon are placed upon each other, the first semiconductor substrate being where a photoelectric conversion element and a gate electrode of a transfer transistor for transferring an electric charge from the photoelectric conversion element are disposed, the second semiconductor substrate being where a peripheral circuit portion for reading out a signal based on the electric charge generated at the photoelectric conversion element is disposed, wherein the second semiconductor substrate is provided with a layer of silicide, and wherein the first semiconductor substrate is not provided with a layer of silicide.
地址 Tokyo JP