发明名称 |
Solid-state image pickup apparatus and image pickup system |
摘要 |
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. |
申请公布号 |
US9178081(B2) |
申请公布日期 |
2015.11.03 |
申请号 |
US201313898264 |
申请日期 |
2013.05.20 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Endo Nobuyuki;Itano Tetsuya;Yamazaki Kazuo;Watanabe Kyouhei;Ichikawa Takeshi |
分类号 |
H01L27/146;H01L31/0224;H01L31/02;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
Canon USA, Inc. IP Division |
代理人 |
Canon USA, Inc. IP Division |
主权项 |
1. A solid-state image pickup apparatus in which a first semiconductor substrate comprising silicon and a second semiconductor substrate comprising silicon are placed upon each other, the first semiconductor substrate being where a photoelectric conversion element and a gate electrode of a transfer transistor for transferring an electric charge from the photoelectric conversion element are disposed, the second semiconductor substrate being where a peripheral circuit portion for reading out a signal based on the electric charge generated at the photoelectric conversion element is disposed,
wherein the second semiconductor substrate is provided with a layer of silicide, and wherein the first semiconductor substrate is not provided with a layer of silicide. |
地址 |
Tokyo JP |