发明名称 Substrate carrying mechanism, substrate processing apparatus, and semiconductor device manufacturing method
摘要 The present invention provides a substrate carrying mechanism, a substrate processing apparatus, and a semiconductor device manufacturing method that, when carrying a substrate, suppress the generation of scratches and particles caused by substrate deformation, suppress a decrease in substrate holding force due to substrate deformation, and realizes stable high-speed carriage. Namely, the substrate carrying mechanism, the substrate processing apparatus, and the semiconductor device manufacturing method of the present invention include: a plate-like body that becomes a support base body of a substrate that is a carrying subject; and substrate support portions in which plural convex portions disposed on a surface of the plate-like body are placed on a circumference of a circle that is smaller than the diameter of the substrate.
申请公布号 US9177850(B2) 申请公布日期 2015.11.03
申请号 US201113225489 申请日期 2011.09.05
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 Takahashi Akira
分类号 H01L21/687;H01L21/673 主分类号 H01L21/687
代理机构 Solaris Intellectual Property Group PLLC 代理人 Solaris Intellectual Property Group PLLC
主权项 1. A substrate carrying mechanism used in a carrying mechanism for carrying a substrate to a processing chamber that processes the substrate, the substrate carrying mechanism comprising: a plate-like body that becomes a support base body of a substrate that is carried; first support portions comprising plural projecting portions that are disposed bilaterally symmetric on a surface of the plate-like body and that support a region at an inner side with respect to an outer peripheral edge of the substrate, the first support portions being arc-shaped when seen in a perspective view and having top surfaces that are higher than the surface of the plate-like body when seen in a cross-sectional view; second support portions comprising plural projecting portions that are disposed at positions so as to support the substrate at an inner region with respect to positions of the first support portions on the surface, the second support portions being arc-shaped when seen in a perspective view and having top surfaces that are higher than the surface of the plate-like body when seen in a cross-sectional view, the first support portions and the second support portions being a same height and extending between the surface of the plate-like body and the substrate, the first support portions being spaced apart from each other on a circumference of a first circle that is concentric with the outer peripheral edge of the substrate, at positions that are closer, by a predetermined distance, to the center of the substrate than the outer peripheral edge of the substrate, and the second support portions being spaced apart from each other on a circumference of a second circle that is concentric with, and has a smaller diameter than that of, the first circle; and on the surface of the plate-like body, arc-shaped side walls that are formed higher than the first support portions and the second support portions, and that are disposed on the outer side of the first support portions with respect to a center of a surface of the substrate, so as to correspond to the first support portions, a recessed portion that extends lower than the top surfaces of the first support portions being disposed between each side wall and a corresponding one of the first support portions.
地址 Tokyo JP