发明名称 Ion gate method and apparatus
摘要 The present invention generally relates to systems and methods for transmitting beams of charged particles, and in particular to such systems and methods that employ defecting at least one set of grid elements into the same plane to form an ion gate. In addition, an operation method of closing a gate involving alternating voltages on the adjacent gate wires is described.
申请公布号 US9177770(B2) 申请公布日期 2015.11.03
申请号 US201012763092 申请日期 2010.04.19
申请人 Excellims Corporation 发明人 Osgood Mark A.;Wu Ching
分类号 H01J49/06;G01N27/62;C07B63/00 主分类号 H01J49/06
代理机构 代理人
主权项 1. A method for manufacturing an ion gate for a charged particle stream, comprising electrically isolated grid elements that lie in the same plane, the method comprising the steps of: a. fabricating at least two gate elements, wherein each gate element includes at least one set of grid elements; and wherein fabricating the gate element includes removing portions of a substantially planar metal foil to form a plurality of grid elements; b. assembling an insulating layer between the gate elements; c. bending at least one set of grid elements into substantially the same plane of the other set of grid elements with at least one substrate; and d. securing the gate elements and the substrates together.
地址 Acton MA US
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