发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 The present invention is to obtain a substrate processing device and a substrate processing method for effectively suppressing a voltage change of a substrate on an electrode and suppressing a change of incident energy of ions received by the substrate. To this end, the substrate processing device comprises: a first electrode for maintaining the substrate in a main circumference; a second electrode facing the first electrode; and a pulse power supply unit for supplying RF power and a pulse voltage to the first electrode wherein the RF power applies an RF voltage having 40MHz frequency or more to the first electrode and the pulse voltage lowers a voltage in response to the elapse of time and has an overlap with the RF voltage.
申请公布号 KR20150123209(A) 申请公布日期 2015.11.03
申请号 KR20150144283 申请日期 2015.10.15
申请人 TOKYO ELECTRON LIMITED 发明人 UI AKIO;HAYASHI HISATAKA;KAMINATSUI TAKESHI;HIMORI SHINJI;YAMADA NORIKAZU;OHSE TAKESHI;ABE JUN
分类号 H01L21/3065;H01L21/02;H01L21/768;H05H1/46 主分类号 H01L21/3065
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