发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
The present invention is to obtain a substrate processing device and a substrate processing method for effectively suppressing a voltage change of a substrate on an electrode and suppressing a change of incident energy of ions received by the substrate. To this end, the substrate processing device comprises: a first electrode for maintaining the substrate in a main circumference; a second electrode facing the first electrode; and a pulse power supply unit for supplying RF power and a pulse voltage to the first electrode wherein the RF power applies an RF voltage having 40MHz frequency or more to the first electrode and the pulse voltage lowers a voltage in response to the elapse of time and has an overlap with the RF voltage. |
申请公布号 |
KR20150123209(A) |
申请公布日期 |
2015.11.03 |
申请号 |
KR20150144283 |
申请日期 |
2015.10.15 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
UI AKIO;HAYASHI HISATAKA;KAMINATSUI TAKESHI;HIMORI SHINJI;YAMADA NORIKAZU;OHSE TAKESHI;ABE JUN |
分类号 |
H01L21/3065;H01L21/02;H01L21/768;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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