Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same

摘要

Provided are a two-terminal switching device having a bidirectional switching property, and a resistive memory cross-point array including the same. The two-terminal switching device includes a first electrode. A first tunneling barrier layer is disposed on the first electrode. An oxide semiconductor layer is disposed on the first tunneling barrier layer. A second tunneling barrier layer is disposed on the oxide semiconductor layer. A second electrode is disposed on the second tunneling barrier layer.

主权项

1. A two-terminal switching device, comprising:
a first electrode; a first tunneling barrier layer disposed on the first electrode; an oxide semiconductor layer disposed on the first tunneling barrier layer; a second tunneling barrier layer disposed on the oxide semiconductor layer; a second electrode disposed on the second tunneling barrier layer, wherein the first tunneling barrier layer and the second tunneling barrier layer are different material layers.