Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film portion extends in a first direction perpendicular to a stacking direction from the electrode layer toward the first semiconductor layer. The first thin film portion has a first thickness. The thick film portion is arranged with the first thin film portion in a plane perpendicular to the stacking direction. An angle between the first direction and the cleavage plane is not less than 3 degrees and not more than 27 degrees. The first elongated electrode extends in the first direction in contact with the first thin film portion.

主权项

1. A semiconductor light emitting device, comprising:
an electrode layer; a first semiconductor layer of a first conductivity type including a crystal having a cleavage plane, the first semiconductor layer including a first thin film portion extending in a first direction perpendicular to a third direction from the electrode layer toward the first semiconductor layer, the first thin film portion having a first thickness, and a thick film portion arranged with the first thin film portion in a plane perpendicular to the third direction, the thick film portion having a second thickness thicker than the first thickness, and an angle between the first direction and the cleavage plane being not less than 3 degrees and not more than 27 degrees; a first elongated electrode extending in the first direction in contact with the first thin film portion; a second semiconductor layer of a second conductivity type provided between the electrode layer and the first semiconductor layer and electrically connected to the electrode layer; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer.