Light-emitting device and method for manufacturing same

摘要

The present invention relates to a light-emitting device that is capable of preventing an increase in forward voltage while improving optical output characteristics, and to a method for manufacturing same. The light-emitting device comprises: a first conductive semiconductor layer; an active layer which is in contact with the first conductive semiconductor layer; a second conductive semiconductor layer which is in contact with the active layer and which has a patterned groove on a surface opposite the surface that is in contact with the active layer; a current-blocking layer which is formed on a bottom of the groove; a transparent conductive layer which is formed along a surface opposite the surface of the second conductive semiconductor layer that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer; a reflective layer which is formed on a surface opposite the surface of the transparent conductive layer that is in contact with the second conductive semiconductor layer; a support substrate which is formed on a surface opposite the surface of the reflective layer that is in contact with the transparent conductive layer; and an electrode that is patterned on a surface opposite the surface of the first conductive semiconductor layer that is in contact with the active layer.

主权项

1. A light-emitting device, comprising:
a first conductive semiconductor layer; an active layer which is in contact with the first conductive semiconductor layer; a second conductive semiconductor layer which is in contact with the active layer, and which has a patterned groove on one surface thereof opposite to another surface thereof that is in contact with the active layer; a current-blocking layer which is formed only on a bottom surface of the groove excluding a sidewall of the groove; a transparent conductive layer which is formed along one surface of the second conductive semiconductor layer opposite to another surface thereof that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer; a reflective layer which is formed on one surface of the transparent conductive layer opposite to another surface thereof that is in contact with the second conductive semiconductor layer; a support substrate which is formed on one surface of the reflective layer opposite to another surface thereof that is in contact with the transparent conductive layer; and an electrode that is patterned on one surface of the first conductive semiconductor layer opposite to another surface thereof that is in contact with the active layer.