Method of forming an asymmetric MIMCAP or a Schottky device as a selector element for a cross-bar memory array

摘要

MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.

主权项

1. A device comprising:
a first layer disposed on a substrate,
wherein the first layer is operable as a first electrode; a second layer disposed on the first layer,
wherein the second layer comprises a first dielectric material; a third layer disposed on and directly interfacing the second layer,
wherein the third layer comprises a second dielectric material,wherein the first dielectric material comprises an oxide of a first metal, andwherein the second dielectric material comprises an oxide of a second metal, andwherein the first metal is different from the second metal,wherein the first metal is titanium, and wherein the second metal is hafnium,wherein the third layer has more defects than the second layer, andwherein the third layer has a lower concentration of oxygen than the second layer; and a fourth layer disposed on the third layer,
wherein the fourth layer is operable as an electrode,wherein a work function of a material of the fourth layer is less than a work function of a material of the first layer.