SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

摘要

Described is a semiconductor device which includes a substrate on which a device isolation trench defining active regions is formed, gate structures which are formed in the active region and crosses the device isolation trench, a first protection layer which is formed on the substrate of the active region, and a second protection layer which is formed on the first protection layer. In a first device isolation region in which the gate structure and the device isolation trench cross, the first protection layer is from the inner wall and the bottom of the device isolation trench with a conformal state. The second protection layer is formed on the first protection layer on the bottom of the device isolation trench.